期刊
SMALL
卷 10, 期 9, 页码 1848-1856出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201302705
关键词
-Ga2O3 multi-layered nanobelts; facet-oriented; in situ; photodetector; high-temperature
类别
资金
- National Natural Science Foundation of China [51302035, 21171035]
- Hong Kong Scholars Program
- Shanghai Natural Science Foundation [13ZR1451200]
- Chinese Ministry of Education [313015]
- Shanghai Leading Academic Discipline Project [B603]
- Ph.D. Programs Foundation of Ministry of Education of China [20110075110008, 20130075120001]
- Fundamental Research Funds for the Central Universities
- Shanghai University Young Teacher Training Program
- Starting Funding for Youth Teacher in Donghua University
- Japanese Society for the Promotion of Science [24760285, 24760032]
- Grants-in-Aid for Scientific Research [24760285, 24760032] Funding Source: KAKEN
Fabrication of a high-temperature deep-ultraviolet photodetector working in the solar-blind spectrum range (190-280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, -Ga2O3 multi-layered nanobelts with (l00) facet-oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As-fabricated DUV solar-blind photodetectors using (l00) facet-oriented -Ga2O3 multi-layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the -Ga2O3 nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10(-14) A), a fast time response (<0.3 s), a high R (approximate to 851 A/W), and a high EQE (approximate to 4.2 x 10(3)). The present fabricated facet-oriented -Ga2O3 multi-layered nanobelt based devices will find practical applications in photodetectors or optical switches for high-temperature environment.
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