期刊
SMALL
卷 10, 期 10, 页码 1999-2005出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201303768
关键词
n-type doping; graphene field-effect transistor; carrier mobility; dirac point
类别
资金
- Pioneer Research Center Program through the National Research Foundation (NRF) of Korea - Ministry of Science, ICT & Future Planning [2012-0009460]
- National Research Foundation of Korea - Ministry of Education [NRF-2013R1A1A2012660]
- National Research Foundation of Korea [2012-0009461] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Although graphene can be easily p-doped by various adsorbates, developing stable n-doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution-processed (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) on chemical-vapor-deposited (CVD) graphene. Strong n-type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field-effect transistors. The strong n-type doping effect shifts the Dirac point to around -140 V. Appropriate annealing at a low temperature of 80 oC enables an enhanced electron mobility of 1150 cm(2) V-1 s(-1). The work function and its uniformity on a large scale (1.2 mm x 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month.
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