4.8 Article

Electrical Graphene Aptasensor for Ultra-Sensitive Detection of Anthrax Toxin with Amplified Signal Transduction

期刊

SMALL
卷 9, 期 19, 页码 3352-3360

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201203245

关键词

graphene; field-effect transistors; biosensors; aptamers; anthrax toxin

资金

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) [2010-0015035]
  2. WCU Program through the National Research Foundation of Korea (NRF) [R32-2008-000-10124-0]
  3. Ministry of Education, Science and Technology (MEST)
  4. Cooperative Research Program grants for Agriculture Science & Technology Development [PJ008264]
  5. Rural Development Administration
  6. National Research Foundation of Korea [2012R1A1A3008822, R32-2012-000-10124-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  7. Rural Development Administration (RDA), Republic of Korea [PJ008264082013] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Detection of the anthrax toxin, the protective antigen (PA), at the attomolar (aM) level is demonstrated by an electrical aptamer sensor based on a chemically derived graphene field-effect transistor (FET) platform. Higher affinity of the aptamer probes to PA in the aptamer-immobilized FET enables significant improvements in the limit of detection (LOD), dynamic range, and sensitivity compared to the antibody-immobilized FET. Transduction signal enhancement in the aptamer FET due to an increase in captured PA molecules results in a larger 30 mV/decade shift in the charge neutrality point (V-g,V-min) as a sensitivity parameter, with the dynamic range of the PA concentration between 12 aM (LOD) and 120 fM. An additional signal enhancement is obtained by the secondary aptamer-conjugated gold nanoparticles (AuNPs-aptamer), which have a sandwich structure of aptamer/PA/aptamer-AuNPs, induce an increase in charge-doping in the graphene channel, resulting in a reduction of the LOD to 1.2 aM with a three-fold increase in the V-g,V-min shift.

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