期刊
SMALL
卷 9, 期 19, 页码 3295-3300出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201300134
关键词
molybdenum disulfide; graphene; transistors; flexible electronics; transparent devices
类别
资金
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [20120005081]
- WCU program [R31-10026]
- National Research Foundation of Korea [20110006703]
- Korea Basic Science Institute (KBSI) grant [T32516]
- Ministry of Science, ICT & Future Planning, Republic of Korea [GIST-03-05, GIST-11] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [T32500] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0014683] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (approximate to 74%), and current on/off ratio (>10(4)) with an average field effect mobility of approximate to 4.7 cm(2) V-1 s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (approximate to 22 meV) forms at the MoS2/graphene interface, which is comparable to the MoS2/metal interface. The high stability in electronic performance of the devices upon bending up to +/- 2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.
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