4.8 Article

High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

期刊

SMALL
卷 8, 期 11, 页码 1643-1649

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201200382

关键词

light-emitting diodes; gallium nitride; laser lift-off (LLO); transfer printing; flexible electronics

资金

  1. Department of Energy, Division of Materials Sciences through the Frederick Seitz MRL [DEFG02-91ER45439]
  2. Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign
  3. National Science Foundation [DMI-0328162]
  4. US Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
  5. Directorate For Engineering
  6. Div Of Electrical, Commun & Cyber Sys [824129] Funding Source: National Science Foundation

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