期刊
SMALL
卷 7, 期 20, 页码 2899-2905出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201101157
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类别
资金
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Fondazione Cariplo [2010-1055]
Resistive-switching memory (RRAM) is an emerging nanoscale device based on the localized metal-insulator transition within a few-nanometer-sized metal oxide region. RRAM is one of the most promising memory technologies for the ultimate downscaling of nonvolatile memory. However, to develop memory arrays with densities approaching 1 Tb cm(-2), bottom-up schemes based on synthesis and assembly of metal oxide nanowires (NWs) must be demonstrated. A RRAM memory device based on core-shell Ni-NiO NWs is presented, in which the Ni core plays the role of the metallic interconnect, while the NiO shell serves as the active switching layer. A resistance change of at least two orders of magnitude is shown on electrical operation of the device, and the metal-insulator switching is unequivocally demonstrated to take place in the NiO shell at the crossing between two NWs or between a NW and a gold electrode strip. Since the fabrication of the NW crossbar device is not limited by lithography, this approach may provide a basis for high-density, low-cost crossbar memory with long-term storage stability.
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