期刊
SMALL
卷 8, 期 1, 页码 59-62出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201101528
关键词
graphene; field-effect transistors; unipolar n-type doping; ambipolor n-type doping
类别
资金
- AFOSR [FA9550-09-1-0581]
- AFOSR through a STTR
- PrivaTran [FA9550-10-C-0098]
- Lockheed Martin LANCER IV
- ONR MURI [00006766, N00014-09-1-1066]
- AFRL through Universal Technology Corporation [FA8650-05-D-5807]
A controlled ambipolar-to-unipolar (n-type) conversion, along with a maximum fourfold increase in the electron mobility, in graphene field-effect transistors (FETs) is achieved by coating the surface of graphene with a layer of a mixed polymer system, poly(ethylene imine) (PEI) in poly(ethylene glycol) (PEG). The PEG serves as a physisorption adhesion agent for the PEI. Both unipolar and ambipolar n-type doping can be realized by adjusting the thickness of PEI films atop the graphene channel. The observed phenomena are attributed to the doping/dedoping effects of the external PEI film. The study provides a guide to engineering graphene transport properties through chemical modifications.
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