期刊
SMALL
卷 5, 期 22, 页码 2576-2580出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.200900562
关键词
alignment; ion beams; irradiation; nanowires
类别
资金
- German Research Foundation (DFG) [R01198/7, Pr515/8]
- U.S. Department of Energy [DE-FG07-14891]
Gallium arsenide nanowires are grown on < 100 > GaAs substrates, adopting the epitaxial relation and thus growing with an angle around 35 degrees off the substrate surface. These straight nanowires are irradiated with different kinds of energetic ions. Depending on the ion species and energy, downwards or upwards bending of the nanowires is observed to increase with ion fluence. In the case of upwards bending, the nanowires can be aligned towards the ion beam direction at high fluences. Defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending. Monte Carlo simulations of the implantation are presented to substantiate the results.
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