期刊
SMALL
卷 4, 期 5, 页码 642-648出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.200700517
关键词
arrays; patterning; reactive ion etching; semiconductor nanowires; thermal oxidation
A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.
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