期刊
SCIENTIFIC REPORTS
卷 5, 期 -, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/srep08441
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资金
- National Basic Research Program of China [2012CB932302]
- National Natural Science Foundation of China [91221101]
- 111 project [B13209]
- Taishan Scholar Program of Shandong
- National Super Computing Centre in Jinan
Search for materials with a large nontrivial band gap is quite crucial for the realization of the devices using quantum spin Hall (QSH) effects. From first-principles calculations combined with a tight-binding (TB) model, we demonstrate that a trivial GaAs film with atomic thickness can be driven to a topological insulator with a sizable band gap by tensile strain. The strain-induced band inversion is responsible for the electronic structure transition. The nontrivial band gap due to spin-orbital coupling (SOC) is about 257 meV, sufficiently larger for the realization of QSH states at room temperature. This work suggests a possible route to the fabrication of QSH-based devices using the well-developed GaAs technology.
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