期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 188, 期 -, 页码 944-948出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2013.07.107
关键词
Extended gate field-effect-transistors; ZnO:Ta pH sensors; Tantalum doped zinc oxide film; Vapor cooling condensation method
资金
- National Science Council, Taiwan, Republic of China [NSC-99-2221-E-006-208-MY3]
- Microsystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan, Republic of China
To obtain wide linear pH sensing range, the tantalum doped zinc oxide (ZnO:Ta) thin film was deposited as the sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensors using the vapor cooling condensation system. Compared with the ZnO EGFET pH sensors, the experimental results exhibited that the linear sensing pH range of the ZnO:Ta EGFET pH sensors was extended from the pH range of 4-12 to the pH range of 1.3-12. Furthermore, the ZnO:Ta pH sensors was stable in the whole extended pH range and showed favorable sensing sensitivity of 41.56 mV/pH. The AFM images of the ZnO:Ta sensing membrane after the measurement in strong acidic solution showed no observable surface damage, which further verified the high corrosion resistance of the ZnO:Ta sensing membrane. (C) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据