期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 161, 期 1, 页码 223-228出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2011.10.023
关键词
Ga2O3; ZnO; Nanorods; Sensor; Response; NO2
资金
- Korean Research Foundation (KRF) through the National Research Lab
- National Research Foundation of Korea [2007-0056622] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ga2O3-based gas sensors show very poor performance at room temperature despite being able to detect a range of gases efficiently at high temperatures of 600-1000 degrees C, which limits their practical use. This study examined the effect of the encapsulation of Ga2O3 nanorods with ZnO on the NO2 gas sensing properties. Ga2O3-core/ZnO-shell nanorods were fabricated by a two step process comprising the thermal evaporation of GaN powders and atomic layer deposition of ZnO. Multiple networked Ga2O3-core/ZnO-shell nanorod sensors showed the response of 32,778% at an NO2 concentration of 100 ppm at 300 degrees C. This response value is 692 times larger than that of bare-Ga2O3 nanorod sensors at an NO2 concentration of 100 ppm. The substantial improvement in the response of Ga2O3 nanorods to NO2 gas by the encapsulation by ZnO can be accounted for based on the space-charge model. (C) 2011 Elsevier B.V. All rights reserved.
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