期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 156, 期 1, 页码 6-11出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2011.04.049
关键词
Indane based beta-diketonate; Europium(III) ternary complex; Luminescence; Phosphor; LED
资金
- Natural Science Foundation of China [50672136]
A novel indane based beta-diketone with trifluorobutane in the contraposition, 5-acetylindane-4,4,4-trifluorobutane-1,3-dione (HAITFBD) and its europium(III) ternary complex, Eu(AITFBD)(3)phen, were designed and synthesized, where phen was 1,10-phenanthroline. The complex was characterized by IR, UV-visible, thermogravimetric analysis (TGA) and photoluminescence (PL) spectroscopy in details. The results show that the Eu(III) complex exhibits high thermal stability, wide and strong excitation bands from 300 nm to 425 nm when monitored at 611 nm, which matches well with the 380 nm-emitting InGaN chips. The complex exhibits intense red emission under excitation of near UV light due to the f-f transitions of the central Eu3+ ion. Based on the emission spectrum, the CIE chromaticity coordinates of the LED are calculated as x = 0.63 and y = 0.34, which is suitable to be used as an efficient red phosphor in fabrication of white LEDs. The fluorescence lifetime and the luminescence quantum yield were also measured. The lowest triplet state energy of the primary ligand AITFBD was measured to be 17,730 cm(-1), higher than that of the lowest excitation state energy level of the central Eu3+ ion, D-5(0), and this suggests that the photoluminescence of the complex is a ligand-sensitized luminescence process (antenna effect). Finally, a bright red light-emitting diode was fabricated by coating the Eu(AITFBD)(3)phen complex onto a 380 nm-emitting InGaN chip. All the results indicate that Eu(AITFBD)(3)phen can be applied as a red component for fabrication of near ultraviolet-based white light-emitting diodes. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据