4.7 Article

Effect of Mg doping on the hydrogen-sensing characteristics of ZnO thin films

期刊

SENSORS AND ACTUATORS B-CHEMICAL
卷 160, 期 1, 页码 266-270

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2011.07.046

关键词

Mg-0.1 Zn0.9O; PLD; Hydrogen-sensing; Mechanism; ZnO

资金

  1. Fundamental Research Funds for the Central Universities of China [lzujbky-2010-82]

向作者/读者索取更多资源

Undoped ZnO and Mg-0.1 Zn0.9O films, both with good crystalline quality and smooth surface, were grown on c-cut sapphire by pulsed laser deposition (PLO) technique. Hydrogen-sensing measurements indicated that the MZO film showed much higher H-2 sensing performance than the undoped ZnO film did. The sensor response is 2.9 for undoped ZnO film to 5000 ppm H-2 at 300 degrees C. The gas response increased to about 50 for the MZO film measured under the same condition. To understand the enhancement of the sensing performances of the MZO film, the gas sensing mechanism of the films was proposed and discussed. (C) 2011 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据