期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 151, 期 1, 页码 39-55出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.09.059
关键词
Silicon carbide (SiC); MOS capacitor; Hydrogen sensor; Harsh environment; Metal electrode; Dielectric layer
资金
- USM
- eScience Fund, Malaysia
SiC-based hydrogen sensors have attracted much attention due to applications in harsh environments. In this paper, harsh environment is defined. Characteristics of SiC-based hydrogen sensors for harsh environment applications are reviewed. Various types of SiC-based field effect hydrogen sensor in terms of their respective history, structure, advantages and disadvantages have been discussed. SiC-based MOS capacitor hydrogen sensor will be conferred in detail. The reasons for selecting SiC in fabricating MOS capacitor hydrogen sensor for harsh environment applications are elucidated. Different hydrogen sensing mechanisms depend on the temperatures and the conditions of catalytic metal layer are highlighted. MOS capacitor SiC-based sensors fabricated by previous research groups are listed. Each catalytic electrodes and oxide layers selected have their significant properties. Examples of nanostructured materials that have been used in forming oxide layer are illustrated. The future challenges in terms of material (metal electrodes and oxide layers) properties and surface properties of materials are described. It is concluded that MOS capacitor SiC-based hydrogen sensors promote green technology. (C) 2010 Elsevier B.V. All rights reserved.
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