4.7 Article

ZnO nanowires grown on SOI CMOS substrate for ethanol sensing

期刊

SENSORS AND ACTUATORS B-CHEMICAL
卷 146, 期 2, 页码 559-565

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.01.009

关键词

SOI CMOS; Gas sensor; Zinc oxide nanowires; Ethanol sensor

资金

  1. Engineering and Physical Sciences Research Council (EPSRC) [EP/F004931/1, EP/F002971/1]
  2. Ministry of Information and Communications, Republic of Korea [RG46736]
  3. EPSRC [EP/F004931/1, EP/F002971/1] Funding Source: UKRI
  4. Engineering and Physical Sciences Research Council [EP/F002971/1, EP/F004931/1] Funding Source: researchfish

向作者/读者索取更多资源

This paper reports on the integration of zinc oxide nanowires (ZnO NWs) with a silicon on insulator (SOI) CMOS (complementary metal oxide semiconductor) micro-hotplate for use as an alcohol sensor. The micro-hotplates consist of a silicon resistive micro-heater embedded within a membrane (composed of silicon oxide and silicon nitride, supported on a silicon substrate) and gold bump bonded aluminum electrodes that are used to make an ohmic contact with the sensing material. ZnO NWs were grown by a simple, low-cost hydrothermal method and characterised using SEM, XRD and photoluminiscence methods. The chemical sensitivity of the on-chip NWs to ethanol vapour (at different humidity levels) was characterised at two different temperatures namely, 300 degrees C and 400 degrees C (power consumption was 24 mW and 33 mW, respectively), and the sensitivity was found to be 0.1%/ppm (response 4.7 at 4363 ppm). These results show that ZnO NWs are a promising material for use as a CMOS ethanol gas sensor that offers low cost, low power consumption and integrated circuitry. (C) 2010 Elsevier B.V. All rights reserved.

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