期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 150, 期 1, 页码 301-307出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.06.069
关键词
Epitaxial graphene; Amperometric measurement; Potentiometric measurement; Toxic gas; NO2 detection
资金
- National Science Foundation [ECCS-0801435]
- Army Research Office [W911NF-08-0299]
- Structured Materials Industries, Inc. through NSF [IIP-0930419]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0801435] Funding Source: National Science Foundation
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1058439] Funding Source: National Science Foundation
Epitaxial graphene grown on SiC substrates is one of the most promising methods for achieving large-area uniform graphene films. Our experimental results demonstrate that graphene layers grown on both the Si and the C-faces of semi-insulating 6H-SiC can offer very high NO2 detection sensitivity and selectivity, as well as fast response time. Exposure to only 500 ppb NO2 reduced the conductivity by 2.25%, while 18 ppm caused a reduction of 10%. In contrast, high concentrations of commonly interfering gases, namely, CO2 (20%), H2O (saturated vapor), NH3 (550 ppm), and pure O-2 increased the conductivity by a maximum of 2% Graphene on the C-face of SiC resulted in somewhat lower sensitivity for the test gases, with the conductivity changing in an opposite direction compared to the Si-face for any particular gas The conductance changes due to molecular adsorption were correlated with changes in the surface work function (SWF) Measurements conducted at higher temperature showed significantly higher changes in conductivity and shorter response times. (C) 2010 Elsevier B.V All rights reserved
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