期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 146, 期 1, 页码 53-60出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.01.047
关键词
Pd; Electroless; Porous silicon; Hydrogen gas sensor; Schottky like based gas sensor
资金
- Sharif University of Technology research department
We prepared porous silicon samples coated by continuous palladium layer in electroless process. Scanning electron microscopy (SEM) showed cauliflower-shape Pd clusters on the surface. I-V curves of Schottky like Pd/porous Si samples were measured in air and in hydrogen. These measurements showed a metal-interface-semiconductor configuration rather than an ideal Schottky diode. Variations of the electrical current in the presence of diluted hydrogen at room temperature revealed that the samples can sense hydrogen in a wide range of concentration (100-40,000 ppm) without any saturation behavior. Hydrogen sensing properties of these samples were investigated at room temperature for a duration of nine months. Sample sensitivity (response time) decreased (increased) to a saturated value after 45 days. We discussed sensing and Schottky contact properties of the fresh and aged Pd/porous Si samples by variation of structure and chemical composition using SEM. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) data. (C) 2010 Elsevier B.V. All rights reserved.
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