期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 150, 期 2, 页码 681-685出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.08.020
关键词
Humidity sensor; SAW; Ga doped ZnO; AlN thin film; Sol-gel
资金
- Ministry of Knowledge Economy [B0009720]
- Korea Institute of Industrial Technology(KITECH) [B0009720] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this work the effect of the Ga dopant concentration on the sensing responses of a surface acoustic wave (SAW) humidity sensor with a nanocrystalline ZnO/polycrystalline aluminum nitride (AlN)/Si-layered structure was investigated Sol-gel derived Ga-doped ZnO was used as the sensing layer The experimental results showed that the frequency shift of the SAW humidity sensors increased as the Ga dopant concentration increased from 00 to 3 0 wt% over a relative humidity (RH) range from 10 to 90% at 25 degrees C The largest shift in the frequency response was at approximately 420 kHz for the sensor doped with 3 0 wt% Ga The sensor demonstrated good short-term repeatability and low hysteresis In addition the SAW velocity of the sensors decreased slightly from 5105 to 5040 m/s as the Ga doping concentration increased from 00 to 3 0 wt% under 30% RH at 25 degrees C The increase in temperature (16-37 degrees C) led to a reduction in the variability of the sensor transmission characteristics such as the center frequency and the insertion loss caused by the different RH values (10-90%) (c) 2010 Elsevier B V All rights reserved
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据