期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 210, 期 -, 页码 77-85出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2014.01.036
关键词
MEMS; Piezoresistive accelerometer; CMOS front-end ASIC; Variable-gain; Temperature compensation; SOI
资金
- Aeronautical Development Agency (ADA)
- National Programme on Micro And Smart Systems (NPMASS), Govt. of India
System development and characterization of a low noise low offset SOI MEMS-CMOS PCB-integrated multi-chip +/- 4g piezoresistive accelerometer sensor comprising a coupled multi-bandwidth variable-gain amplifier block and a thermal sensitivity and offset compensation block is presented in this work. Custom design and fabrication has been carried out for both the SOI MEMS sensor and the analog front-end for high precision and operational reliability. The system is shown to have a scale factor of similar to 4 mV/g and an output nonlinearity <1% of full-scale output with a cross-axis sensitivity <1%. Cyclic loading experiments exhibit distortionless operation over similar to 1000,000 cycles without failure indicative of an extremely robust system. (C) 2014 Elsevier B.V. All rights reserved.
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