期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 171, 期 2, 页码 207-211出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2011.09.011
关键词
CuO nanowire; Thermal process; Photodetector
资金
- Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan [D97-2700]
- Advanced Optoelectronic Technology Center, NCKU under Ministry of Education
- Center for Condensed Matter Sciences (CCMS), National Taiwan University
The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 degrees C in air for 2 h, high density CuO nanowires with an average length of 1.2 mu m and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum. (C) 2011 Elsevier B.V. All rights reserved.
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