期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 162, 期 2, 页码 406-417出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2010.03.021
关键词
Deep reactive ion etching (DRIE); Capacitive sensing; Lock-in amplifier; Liquid monitoring
This paper presents the design, fabrication and characterization of a femto-farad capacitive sensor, intended for pico-liter liquid measurements in microfluidic channels. The sensor has vertical silicon electrodes integrated into a through-wafer channel to measure the liquid level variations in the channel. An equivalent electrical model is developed to analyze the sensor's behavior. A six-mask, IC-compatible process is developed to fabricate the device. The optimization of critical process steps is discussed. The fabricated channel is 40 mu m in diameter and 50 mu m deep, corresponding to a total liquid volume of 63 pL. The sensor capacitance varies from 1.5 fF (empty channel) to 13.1 fF (channel filled with water). To reliably detect such small capacitance changes, a low-noise measurement system, based on a lock-in amplifier, is implemented. The measured sensitivity of the system is 14.1 mV/fF, and the capacitance detection limit as determined by thermal noise is 0.057 aF/Hz(1/2). (C) 2010 Elsevier B.V. All rights reserved.
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