期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 161, 期 1-2, 页码 120-126出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2010.04.026
关键词
Thermopile; Array; Crystal direction; Front-cut
A front-cut infrared thermopile array with good CMOS compatibility is demonstrated in this paper. Properly arranged narrow windows in IR absorbing area of the thermopile are designed along the [1 0 0] direction on the (1 0 0) Si wafer. Our experiment shows that this infrared thermopile array has good responsivity of 43 v/w, detectivity of 2.8 x 10(7) cm Hz(1/2)/W, and response time of 9 ms as well as good yield better than 90%. A single element reached 99% yield in a wafer. The responsivity non-uniformity of elements in a 8 x 2 thermopile array does not exceed 3% and it costs only 90 etching min for the element size of 490 mu m x 490 mu m. Based on this thermopile array, an IR imager is developed. (C) 2010 Elsevier B.V. All rights reserved.
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