期刊
SENSORS
卷 13, 期 4, 页码 4640-4658出版社
MDPI
DOI: 10.3390/s130404640
关键词
imaging device; high-speed; image sensor; BSI; ISIS; ISAS
资金
- JST A-STEP
- Adaptive and Seamless Technology Transfer Program through target-driven R&D, FS Exploratory Research
- MEXT [3, 11]
- JST SENTAN [12]
- NEDO
- J-PARC of the Japanese government [13]
- NHK, Japan Broadcasting Corporation
The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct intrusion of light and migration of signal electrons to the storage area on the frontside, a cross-sectional sensor structure with thick pnpn layers was developed, and named Tetratified structure. By folding and looping in-pixel storage CCDs, an image signal accumulation sensor, ISAS, is proposed. The ISAS has a new function, the in-pixel signal accumulation, in addition to the ultra-high-speed imaging. To achieve much higher frame rate, a multi-collection-gate (MCG) BSI image sensor architecture is proposed. The photoreceptive area forms a honeycomb-like shape. Performance of a hexagonal CCD-type MCG BSI sensor is examined by simulations. The highest frame rate is theoretically more than 1Gfps. For the near future, a stacked hybrid CCD/CMOS MCG image sensor seems most promising. The associated problems are discussed. A fine TSV process is the key technology to realize the structure.
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