期刊
SENSORS
卷 13, 期 10, 页码 13575-13583出版社
MDPI
DOI: 10.3390/s131013575
关键词
hydrogen sensor; high temperature; SiC; Ta2O5; MIS structure
资金
- Ministry of Education, Science, and Technology (MEST)
- National Research Foundation of Korea (NRF)
We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 degrees C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
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