期刊
SENSORS
卷 13, 期 10, 页码 13744-13778出版社
MDPI
DOI: 10.3390/s131013744
关键词
amorphous selenium; photodetector; carrier multiplication; diamond; cold cathode
资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan [21560053, S0801012]
- Grants-in-Aid for Scientific Research [21560053] Funding Source: KAKEN
Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.
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