4.6 Review

A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

期刊

SENSORS
卷 9, 期 8, 页码 6504-6529

出版社

MDPI
DOI: 10.3390/s90806504

关键词

metal oxide semiconductor; one-dimensional nanostructures; sensor; photodetector; transistor

资金

  1. Japan Society for Promotion of Science (JSPS)
  2. National Institute for Materials Science (NIMS), Tsukuba, Japan
  3. National Institute for Materials Science (NIMS), MEXT, Japan

向作者/读者索取更多资源

One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO2, Cu2O, Ga2O3, Fe2O3, In2O3, CdO, CeO2, and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area.

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