期刊
SCIENTIFIC REPORTS
卷 5, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep11839
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资金
- Korea Institute of Science and Technology (KIST), Republic of Korea [2E25810]
The possibilities offered by catalytic gamma-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on gamma-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of gamma-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a 'graphene sticker' into an ultrafast mode-locked laser.
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