4.0 Article

Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Materials Science, Multidisciplinary

Sol-gel deposited ceria thin films as gate dielectric for CMOS technology

Anil G. Khairnar et al.

BULLETIN OF MATERIALS SCIENCE (2013)

Article Chemistry, Inorganic & Nuclear

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

A. G. Khairnar et al.

SOLID STATE SCIENCES (2013)

Review Materials Science, Multidisciplinary

Review and Perspective of Hf-based High-k Gate Dielectrics on Silicon

Gang He et al.

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES (2012)

Article Engineering, Electrical & Electronic

Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

Hock Jin Quah et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

Article Engineering, Electrical & Electronic

Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

P. M. Tirmali et al.

SOLID-STATE ELECTRONICS (2011)

Article Materials Science, Multidisciplinary

Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Pinaki Laha et al.

THIN SOLID FILMS (2010)

Article Materials Science, Ceramics

Structure and dielectric properties of HfO2 films prepared by a sol-gel route

M. -G. Blanchin et al.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY (2008)

Article Physics, Multidisciplinary

Electrical characterizations of HfO2/Al2O3/Si as alternative gate dielectrics

J. -Y. Son et al.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2007)

Article Chemistry, Physical

Microstructure and interfacial properties of HfO2-Al2O3 nanolaminate films

M. Liu et al.

APPLIED SURFACE SCIENCE (2006)

Article Materials Science, Coatings & Films

Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films

SX Lao et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2005)

Article Materials Science, Ceramics

Electronic conductivity and dielectric properties of nanocrystalline CeO2 films

J Lappalainen et al.

JOURNAL OF ELECTROCERAMICS (2004)

Article Physics, Applied

Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si

HY Yu et al.

APPLIED PHYSICS LETTERS (2002)

Article Engineering, Electrical & Electronic

Current transport in metal/hafnium oxide/silicon structure

WJ Zhu et al.

IEEE ELECTRON DEVICE LETTERS (2002)