期刊
SEMICONDUCTORS
卷 47, 期 9, 页码 1174-1179出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782613090248
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Photosensitive n-TiN/p-Si heterojunctions are fabricated by the reactive magnetron sputtering of a thin titanium-nitride film with n-type conductivity onto polished polycrystalline p-Si wafers. The I-V characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and series resistance of the n-TiN/p-Si heterojunction are studied. The dominant mechanisms of current transport through the heterojunction in the cases of forward and reverse bias are established. The heterostructures generate the open-circuit voltage V (oc) = 0.4 V and the short-circuit current I (sc) = 1.36 mA/cm(2) under illumination with a power density of 80 mW/cm(2).
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