期刊
SEMICONDUCTORS
卷 47, 期 7, 页码 892-898出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782613070208
关键词
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资金
- National Academy of Sciences of Ukraine [0106U000594]
- Ministry of Education, Science, Youth, and Sports of Ukraine [DR 0111U001088]
The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni1 + x atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.
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