期刊
SEMICONDUCTORS
卷 47, 期 11, 页码 1523-1527出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782613110171
关键词
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资金
- Russian Foundation for Basic Research [NSh-3008.2012.2]
- Federal Program of Support for Leading Scientific Schools [11-02-00234a]
- Department of Physical Sciences of the Russian Academy of Sciences
The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength lambda = 3.5 mu m, contained a positive-luminescence emission band at 3.8 mu m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.
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