Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

The possibility of controlling the effective barrier height in Schottky diodes based on silicon structures grown by the molecular-beam-epitaxy method is experimentally investigated. It is shown that control of the effective barrier height is possible both when using heavily doped surface homogeneous (3D) layers (similar to 10(20) cm(-3)) and surface (2D) delta layers (similar to 10(13) cm(-2)), which provide tunnel transmission of the current through the barrier on the metal-semiconductor interface. The dependences of the effective barrier height on the parameters of the heavily doped layers are investigated. The performed simulation of electron transport in the structures makes it possible to qualitatively explain the observed experimental results.