期刊
SEMICONDUCTORS
卷 45, 期 9, 页码 1211-1218出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782611090156
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-
资金
- Department of Science & Technology (DST), Government of India
A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its microwave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various subband calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h(21) = 1) cut-off frequency (f(t)), high power-gain frequency (f(max)). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range. DOI: 10.1134/S1063782611090156
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