期刊
SEMICONDUCTORS
卷 44, 期 4, 页码 544-549出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782610040238
关键词
-
Bi2Te3 and Sb2Te3 films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 x 10(-5) Torr) on single crystal substrates of Al2O3 (0001), BaF2 (111), and fresh cleavages of KCl or NaCl (001) heated to 453-523 K. The films were 10-1500 nm thick. The structures of the bulk material of targets and films were studied by X-ray diffractometry and transmission high-energy electron diffraction, respectively. Electrical properties of the films were measured in the temperature range of 77-300 K. It is shown that the films possess semiconductor properties. Several activation portions are observed in the temperature dependences of resistivity; the energies of activation portions depend on the film thickness and crystallite size.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据