Exchange enhancement of the g factor in InAs/AlSb heterostructures

The evolution of the Shubnikov-de Haas oscillations in InAs/AlSb heterostructures with twodimensional electron gas in InAs quantum wells 12-18 nm wide with considerable variation in the electron concentration (3-8) x 10(11) cm(-2) due to the effect of negative persistent photoconductivity is studied. The values of the effective Lande factor for electrons g* = -(15-35) are determined. It is shown that the value of the g* factor increases as the quantum well width increases.