期刊
SEMICONDUCTORS
卷 42, 期 7, 页码 828-833出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782608070129
关键词
-
The evolution of the Shubnikov-de Haas oscillations in InAs/AlSb heterostructures with twodimensional electron gas in InAs quantum wells 12-18 nm wide with considerable variation in the electron concentration (3-8) x 10(11) cm(-2) due to the effect of negative persistent photoconductivity is studied. The values of the effective Lande factor for electrons g* = -(15-35) are determined. It is shown that the value of the g* factor increases as the quantum well width increases.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据