期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 33, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aae4bd
关键词
germanium; Fermi level pinning; Schottky barrier height
类别
资金
- (JSPS) KAKENHI [25249035, 25886010]
- Kyushu University Interdisciplinary Programs in Education and Projects in Research Development
- JSPS Core-to-Core Program, A. Advanced Research Networks
- Grants-in-Aid for Scientific Research [25249035, 25886010] Funding Source: KAKEN
A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.
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