期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 33, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aad83c
关键词
photodetectors; infrared; silicon; quantum dots; molecular beam epitaxy
类别
资金
- EPSRC [EP/L018330/1, EP/P006973/1]
- National Science Foundation of the US. (EPSCoR Grant) [OIA-1457888]
- Royal Academy of Engineering [RF201617/16/28]
- EPSRC [EP/L018330/1, EP/J012904/1] Funding Source: UKRI
An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 10(6) cm(-2) are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 mu m.
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