期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 29, 期 10, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0268-1242/29/10/104002
关键词
niobium pentoxide; RRAM; memristor; analog switching; resistive switching; platinum-free
类别
资金
- German Research Foundation (DFG) [MI 1247/3-1, RA 1050/13-1]
- Cluster of Excellence 'Structure Design of Novel High-Performance Materials via Atomic Design and Defect Engineering (ADDE)'
Resistive switching effects in metal-insulator-metal (MIM) structures are strongly influenced by the electrode materials. In this work a platinum-free symmetric Al/Nb2O5/Al device is compared to a device with platinum bottom electrode. For the device with the platinum bottom electrode, filamentary based resistive switching with good data retention was observed up to 125 degrees C. For the Al/Nb2O5/Al device, an area dependent pure electronic based resistive switching was observed. Electron trapping at the bottom electrode interface is responsible for the observed analog switching behavior which makes an Al/Nb2O5/Al device suitable for neuromorphic applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据