期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 29, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/8/085004
关键词
zinc oxide; photoluminescence; Raman; non-polar
类别
资金
- National Science Council of the Republic of China [NSC 99-2119-M-110-007-MY3]
- Aim for the Top University Plan of National Sun Yat-sen University, Taiwan
We investigate the optical properties of non-polar a-plane ZnO film grown on (010) LiGaO2 substrate by chemical vapor deposition. X-ray diffraction indicates the a-plane orientation and Raman spectroscopy reveals the phase purity. Four distinct features in the near band-edge range are identified as neutral-donor-bound-exciton (D degrees X), free-exciton (FX), free-to-bound, and donor-acceptor pair transitions. The thermal activation energy of D degrees X is 12 meV while an acceptor energy level of 124 meV is estimated. Temperature evolution of photoluminescence (PL) shows that the room-temperature luminescence is a mixture of free-to-bound and FX transitions. The polarization dependence of the near-band-edge transitions were investigated. The largest degree of polarization of 95.5% occurs in FX transition. It can be attributed to anisotropic in-plane strain and the nonpolar a-plane orientation.
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