期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 29, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/12/122001
关键词
silicon heterojunction; atomic layer deposition; passivation; solar cell; transparent conductive oxide
类别
资金
- Dutch Technology Foundation STW/Flash Perspectief Programma
In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si: H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that the ALD process, as opposed to sputtering, does not impair the chemical passivation. However, the field-effect passivation is reduced by the ZnO:Al. The resulting decrease in low injection-level lifetime can be tuned by changing the ZnO:Al doping level (carrier density = 7 x 10(19)-7 x 10(20) cm(-3)), which is explained by a change in the TCO workfunction. Additionally, it is shown that a similar to 10-15 nm ALD ZnO:Al layer is sufficient to mitigate damage to the a-Si: H by subsequent sputtering, which is correlated to ALD film closure at this thickness.
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