期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 28, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/28/2/025015
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- Daegu Gyeongbuk Institute of Science and Technology (DGIST) in Korea [12-NB-02]
- Ministry of Education, Science & Technology (MoST), Republic of Korea [12-NB-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Science, ICT & Future Planning, Republic of Korea [13-NB-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate high operating voltage transparent thin-film transistors (HVTTFTs) using amorphous InGaZnO (a-IGZO) active layers by introducing a high resistance bulk region in the source/drain electrodes. The HVTTFTs are operated at above V-DS = 100 V with a high on/off current ratio and a good subthreshold slope. The electrical characteristics of the HVTTFTs were dominantly affected by Schottky contact resistance for small off-set length, and bulk resistance for large off-set length, indicating that optimization of the off-set length is a key factor to realize high performance HVTTFTs.
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