Recombination and temperature distribution in semiconductors

The temperature distribution in the homogeneous bipolar semiconductor, when the electrical current flows through it, is investigated. The case of the linear approximation with respect to an electrical current is considered. The presence of nonequilibrium charge carriers as well as the processes of recombination is taken into account. It is shown that the temperature distribution in a bipolar semiconductor in a one-dimensional case is a linear function of a coordinate under both small and strong recombinations. It is established that the temperature distribution is a nonlinear function of a coordinate under the finite value of recombination which depends upon the fundamentally new characteristic length for semiconductors.