期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 27, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/27/12/125010
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资金
- Spanish MICyN (THERMOS) [TEC2008-05577/TEC]
- Ingenio-Consolider (RUE) [CSD2009-00046]
The saturation drain current and the gate saturation transconductance for AlGaN/GaN on silicon (1 1 1) high-electron mobility transistors (HEMTs) have been experimentally investigated in the temperature range of 25-300 degrees C. An analytical physical-based closed-form is proposed for modeling the gate transconductance taking into account the polar-optical phonon scattering of the electrons in the two-dimensional electron gas HEMT channel. It is suggested that the experimental temperature dependence of T-1.1 is due to the electron channel mobility dependence coupled with the effect of the access resistances and the channel self-heating due to power dissipation.
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