期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 26, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/26/12/125015
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资金
- Natural Science Foundation of China [11074194, 11104209]
- National High Technology Research and Development Program of China [2009AA03Z219]
- National Basic Research Program of China [2011CB933300]
- Natural Science Foundation of Hubei province [2010CDA016]
- Fundamental Research Funds for the Central Universities
Diodes based on NiO/GaN and NiO/MgO/GaN heterojunctions were fabricated on commercially available n-GaN/u-GaN/Sapphire substrates using a radio frequency magnetron sputtering system. Electroluminescence (EL) measurements revealed that the diode with the MgO layer exhibited fairly pure ultraviolet emission peaking at similar to 370 nm with a full-width at half maximum of about 9 nm, while no EL was detected from the diode without the MgO layer. By choosing a proper thickness of the insulator MgO layer, the EL performance of the devices could be greatly improved. The results were discussed in terms of the I-V characteristics and the band diagrams of the heterojunctions.
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