Frequency operation of low-voltage, solution-processed organic field-effect transistors

A detailed analysis of the frequency operation of low-voltage, solution-processed organic field-effect transistors (FETs) is reported. The relevant figures of merit, such as the transition frequency f(T), are introduced starting from first principles, and the main parameters affecting them are elucidated on the basis of experimental evidence collected on devices fabricated with different technologies. Focus is on the development of printed FETs, fabricated with a bottom-up, scalable approach, showing f(T) > 1 MHz.