期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 25, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/25/4/045015
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Thin films of n-type cuprous oxide (Cu2O) were potentiostatically electrodeposited on a Ti substrate in an acetate bath. Cu2O thin films were annealed at 500 degrees C for 30 min in air for growing p-type cupric oxide (CuO) thin films. n-Cu2O thin films were potentiostatically electrodeposited in an acetate bath on Ti/CuO electrodes in order to fabricate the p-CuO/n-Cu2O heterojunction. The structural, morphological and optoelectronic properties of the CuO/Cu2O heterojunction were studied using x-ray diffraction (XRD), scanning electron micrographs (SEMs) and dark and light current-voltage characteristics. XRD and SEM reveal that well-covered single phase polycrystalline Cu2O thin film on the Ti/CuO electrode can be possible at the deposition potential of -550 mV versus the saturated calomel electrode (SCE) in an acetate bath. Photovoltaic characteristics further established the formation of the CuO/Cu2O heterojunction.
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