4.4 Article

Semiconducting oxide heterostructures

期刊

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/26/1/014040

关键词

-

资金

  1. Deutsche Forschungsgemeinschaft [SFB 762]
  2. European Social Fund (ESF)
  3. Leipzig School of Natural Sciences BuildMoNa [GS 185]

向作者/读者索取更多资源

The properties of semiconducting oxide heterostructures are demonstrated using ZnO and its ternary alloy MgxZn1-xO as a model system. This system is of particular importance, as it shows by far the most detailed research activities among oxide semiconductors. MgxZn1-xO can be grown pseudomorphically on single crystalline ZnO in the step flow growth mode yielding atomically flat surfaces. In such structures, a two-dimensional electron gas was detected with an areal concentration of up to n(2d) = 3.9 x 10(13) cm(-2). The quantum Hall effect was observed in ZnO/MgxZn1-xO single heterostructures, the first oxide system ever to show the quantum Hall effect. Likewise, quantization plays a dominating role in double heterostructures of ZnO and MgxZn1-xO. Quantum confinement and the quantum-confined Stark effect were observed in ZnO/MgxZn1-xO quantum wells grown by MBE and also by PLD. Finally, the ability to induce and control quantized states in ZnO/MgxZn1-xO heterostructures was combined with the extraordinary properties of one-dimensional nanostructures, thus resulting in nano-sized building blocks.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据