期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 25, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/25/12/125001
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A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility.
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