Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering

Low content indium-doped zinc oxide (LC-IZO) films have been prepared through radio-frequency (RF) magnetron sputtering. The work functions of the LC-IZO films were successfully tuned up by modulating the deposited conditions, such as indium content, substrate temperature, bias voltage and film thickness. The work functions of the films may be modulated in a large range between 4.59 eV and 5.56 eV. The change of the work function may be the results induced by the change in the surface state. The results may be helpful for widening the application of LC-IZO films.